???????????????????????????????? SSF26NS60A ? ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 1 of 8 www.silikron.com ? main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 20 a i d @ tc = 100c continuous drain current, v gs @ 10v 13 i dm pulsed drain current 80 p d @tc = 25c power dissipation 208 w linear derating factor 1.66 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=13.8mh 248 mj i as avalanche current @ l=13.8mh 6 a t j t stg operating junction and storage te mperature range -55 to + 150 c v dss 600v r ds (on) 0.135 ? (typ.) i d 20a marking and pin assignment ? schematic diagram ? ? ? ? ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance the SSF26NS60A series mosfets is a new technology, which combines an innovative technology and advance process. this new technology achieves low rdson, energy saving, high reliability and uniformity, superio r power density and space saving. ? d2pak ?
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 2 of 8 www.silikron.com ? thermal resistance symbol characteristics typ. max. units r jc junction-to-case ? 0.6 c/w r ja junction-to-ambient ( t 10s) ? 62 c/w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ? ? v v gs = 0v, i d = 1ma r ds(on) static drain-to-source on-resistance ? 0.135 0.165 ? v gs =10v,i d = 10a ? 0.31 ? t j = 125c v gs(th) gate threshold voltage 2 ? 4 v v ds = v gs , i d = 250 a ? 2.54 ? t j = 125c i dss drain-to-source leakage current ? ? 1 a v ds = 600v,v gs = 0v ? ? 50 t j = 125c i gss gate-to-source forward leakage ? ? ? ? 100 na v gs =30v ? ? ? ? -100 v gs = -30v q g total gate charge ? ? 52 ? nc i d = 20a, v ds =480v, v gs = 10v q gs gate-to-source charge ? ? 11 ? q gd gate-to-drain("miller") charge ? ? 25 ? t d(on) turn-on delay time ? ? 15 ? ns v gs =10v, v ds =300v, r l =30 ? , r gen =4.7 ? i d =10a t r rise time ? ? 18 ? t d(off) turn-off delay time ? ? 46 ? t f fall time ? ? 16 ? c iss input capacitance ? ? 1474 ? pf v gs = 0v v ds = 50v ? = 1mhz c oss output capacitance ? ? 149 ? c rss reverse transfer capacitance ? ? 4 ? source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) ? ? 20 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) ? ? 80 a v sd diode forward voltage ? 0.88 1.3 v i s =20a, v gs =0v t rr reverse recovery time ? 370 ? ns t j = 25c, i f =20a, di/dt = 100a/ s q rr reverse recovery charge ? 5 ? uc ?
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 3 of 8 www.silikron.com ? test circuits and waveforms eas test circuit gate charge test circuit switching time test circuit switching waveforms notes : ? calculated continuous curr ent based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the devic e mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 4 of 8 www.silikron.com ? typical electrical and thermal characteristics ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? figure 2. gate to source cut-off voltage figure 1: typical output characteristics ? figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 5 of 8 www.silikron.com ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? typical electrical and thermal characteristics ? figure 5. maximum drain current vs. case temperature figure 6.typical capacitance vs. drain-to-source voltage
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 6 of 8 www.silikron.com ? mechanical data minmaxminmax a 9.660 10.280 0.380 0.405 b 1.020 1.320 0.040 0.052 c 8.590 9.400 0.338 0.370 d1 1.140 1.400 0.045 0.055 d2 0.700 0.950 0.028 0.037 d3 e 15.090 15.390 0.594 0.606 f 1.150 1.400 0.045 0.055 g 4.300 4.700 0.169 0.185 h 2.290 2.790 0.090 0.110 i k 1.300 1.600 0.051 0.063 a1 0.450 0.650 0.018 0.026 a2 0 0 8 0 1 0 8 0 symbol dimension in millimeters dimension in inches 5.080 (typ) 0.250 (typ) 0.010 (typ) 0.200 (typ) to263 package ? outline ? dimension
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 7 of 8 www.silikron.com ? ordering and marking information device marking: SSF26NS60A package (available) to-263(d2pak) operating temperature range c : -55 to150 oc devices per unit package type units/tube tubes/inner box units/inner box inner boxes/carton box units/ carton box d2pak 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
???????????????????????????????? SSF26NS60A ? silikron semiconductor co.,ltd. 2014.3.27 version : 1.0 page 8 of 8 www.silikron.com ? attention: any and all silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reason ably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you bef ore using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures t hat result from using product s at values that exceed, even momentarily, rated values (such as maximum rating s, operating condition ranges, or other parameters) listed in products specifications of any and all sili kron products described or contained herein. specifications of any and all silikron products described or contai ned herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functi ons of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. silikron semiconductor co.,ltd. strives to supply high- quality high-reliability prod ucts. however, any and all semiconductor products fail with some probability. it is possibl e that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt sa fety measures so that these kinds of accidents or events cannot occur. such measures incl ude but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellect ual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing e quipment, refer to the "deliv ery specification" for the silikron product that you intend to use. customer service worldwide sales and service : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. 11a, 428 xinglong street, suzhou industrial park, p.r.china tel: (86-512) 62560688 fax: (86-512) 65160705 e-mail: sales@silikron.com
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